| PART |
Description |
Maker |
| 2SK246 |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK210 |
N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS) N通道结型（FM调谐器，放大器应用甚高频波段
N CHANNEL JUNCTION TYPE (FM TUNER/ VHF BAND AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba, Corp.
Toshiba Semiconductor
|
| 2SK246 |
Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| 2SK30ATM |
Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
Toshiba Semiconductor
|
| 2SK606 |
Silicon N Channel Junction Type
|
Panasonic
|
| 2SK3376TV |
Silicon N Channel Junction Type For ECM
|
Toshiba Semiconductor
|
| 2SK211 2SK21107 |
Silicon N Channel Junction Type FM Tuner Applications
|
Toshiba Semiconductor
|
| 2SK211 |
N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK184 |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
|
Toshiba Semiconductor
|
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SK170 K170 |
FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK370 2SK37007 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
